Samsung has demonstrated the world’s first in-memory computing technology based on MRAM. Samsung has a paper on the subject in Nature. This paper showcases Samsung’s effort to merge memory and system ...
“Conventional resistive crossbar array for in-memory computing suffers from high static current/power, serious IR drop, and sneak paths. In contrast, the “capacitive” crossbar array that harnesses ...
Resistive memory array with cross-point structure has great potential for high-density information storage and large-scale neural networks. However, the crosstalk caused by the leakage current flowing ...
Earlier this month, IBM announced a new Cu-32 Custom Logic chip-making technology that can be used to dramatically increase the memory capacity and processing speeds of chips. The application target ...
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