Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...
SIC1181KQ and SIC1182KQ are single-channel gate drivers for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. Up to ±8-A ...
Infineon Technologies AG has extended its portfolio of isolated EiceDRIVER Enhanced gate drivers with the F3 Enhanced (1ED332x) family with short-circuit protection. These devices provide protection ...
GENEVA, SWITZERLAND, November 7, 2024 /EINPresswire.com/ -- STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches ...
Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
Cree, one of the market leaders in silicon carbide (SiC) power electronics, introduced new Wolfspeed 650V SiC MOSFETs, which are envisioned for applications where efficiency is a key priority, ...
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