A new silicon carbide (SiC) module built around 1,200 V MOSFETs targets demanding applications requiring bidirectional power flow or a broader range of control. That includes solar inverters as well ...

Key market opportunities exist in the rapid growth and deployment of advanced SiC and GaN power devices within new energy vehicles, driven by increasing sales of 800V+ architecture vehicles. The ...

For the electrification of cars to assist in achieving a decarbonized society, the development of more efficient, compact, and lightweight electric powertrain systems must continue to progress. And ...

Cree, Inc. released the industry's first all-SiC 1.7kV power module in an industry standard 62mm housing. Dec. 2, 2014 Cree, Inc. released the industry's first all-SiC 1.7 kV power module in an ...

Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...

NUREMBERG, Germany--(BUSINESS WIRE)--PCIM Europe – Power Integrations (NASDAQ: POWI), the leader in gate driver technology for medium- and high-voltage inverter applications, today announced the SCALE ...

DUBLIN, Oct. 7, 2015 /PRNewswire/ -- Research and Markets (http://www.researchandmarkets.com/research/4rv28f/cree_1700v_sic) has announced the addition of the "CREE ...

The need to mitigate climate change is driving a need to electrify our infrastructure, vehicles, and appliances, which can then be charged and powered by renewable energy sources. The most visible and ...

Rohm has introduced a 1,200V 300A all-silicon carbide half-bridge power module, with reduced inductance compared with its first devices – claimed stray inductance is 13nH. Rohm began mass production ...

Power Integrations announced a family of gate-driver boards for Infineon EconoDual power switching modules. The family is called Scale EV, and its first member is 2SP0215F2Q0C, designed for the ...