TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor ...
Santa Clara, CA and Kyoto, Japan, March 20, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that precision power analog company Apex Microtechnology is adopting ROHM’s silicon carbide (SiC ...
A new technical paper titled “Liquid Metal Fluidic Connection and Floating Die Structure for Ultralow Thermomechanical Stress of SiC Power Electronics Packaging” was published by researchers at ...
An original electric field mitigation structure, along with a novel screening method, are utilized to maintain reliability and enable the development of the first mass production system for Full-SiC ...
For the electrification of cars to assist in achieving a decarbonized society, the development of more efficient, compact, and lightweight electric powertrain systems must continue to progress. And ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of its new NX-type full-SiC (silicon carbide) power semiconductor module for ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...
SemiQ has created a line of 1,200V SiC mosfet SOT-227 modules with Rds(on) at 7.4. 15 or 34mΩ. There are six models, half have ‘GCMX’ part numbers and just have a mosfet, while the others, GCMS types, ...
Will contribute to more efficient, smaller and lighter power-electronics equipment TOKYO--(BUSINESS WIRE)-- Mitsubishi Electric Corporation (TOKYO:6503) announced today its coming launch of ...
Adoption of silicon carbide (SiC) is becoming more widespread among electric-vehicle (EV) systems such as dc-dc converters, traction inverters, and on-board chargers (OBCs) with bidirectional ...
Rohm has introduced the DOT-247, a 2-in-1 SiC molded module that combines two TO-247 devices to deliver higher power density. The dual structure accommodates larger chips, while the optimized internal ...
Results that may be inaccessible to you are currently showing.
Hide inaccessible results