IEEE

Proposal of Vertical-channel Fin-SiC MOSFET toward Future Device Scaling

Abstract: We propose a new SiC trench MOSFET suitable for achieving both low loss and high reliability. This structure, called a VC Fin-SiC, is characterized by a fin-shaped trench, and by adopting a ...
Taste The Code on MSN

Real-time event notifications with NodeMCU Arduino tutorial

In this video I've created a device that can notify in real time about events that happen on a website. The project uses NodeMCU board and a buzzer to produce sound as alert. The board is programmed ...
EDN

GaN fundamentals: 2DEG, crystal structure, and figure of merit

Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices.
Circuit Digest

Arduino DC Motor Speed Control using GSM

As a result, remote control technologies are being widely adopted across various sectors. Among the many components used in ...
IEEE

Fully-Vertical GaN-on-SiC Trench MOSFETs

Abstract: This letter presents the first demonstration of fully-vertical GaN-on-SiC trench MOSFETs enabled by a conductive AlGaN buffer. Good ON-state device performance including a maximum drain ...