Abstract: Recent growth of the insulated gate bipolar transistor (IGBT) module market has been driven largely by the increasing demand for an efficient way to control and distribute power in the field ...
Abstract: Radiation-induced current gain and 1/f noise degradations in NPN bipolar junction transistors are due to accumulation of oxide-trapped charges and interface states at the surface of the ...
School of Physical Sciences, Indian Association for the Cultivation of Science (IACS), 2A & B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India ...
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