1 Ecole Nationale Supérieure d’Agriculture (ENSA), Thies, Senegal. 2 Unité Eau Environnement et Développement, Université de Liège, Arlon, Belgique. 3 University Alioune Diop de Bambey (UADB), Bambey, ...
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Abstract: We investigate GaN-based gate injection transistors (GITs) with and without an additional AlGaN back-barrier (BB), located between the GaN:uid layer and the buffer. Evidence of the presence ...
Abstract: CFETs based on 2D materials hold the potential to replace Si as a channel at advanced technology nodes. In this work, gate-all-around (GAA) nanosheet FETs with the monolayer MoS $\mathbf{M}_ ...
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