Abstract: The leakage current caused by the total ionizing dose (TID) effect remains a challenge for deep submicrometer technologies. The enclosed layout transistor (ELT) nMOS using the radiation ...
Abstract: In this paper, we propose to develop a full TCAD simulation, using a commercial tool (Sentaurus), of an STT-MRAM device to better understand its electrical behavior. To our knowledge, it is ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results