Abstract: In this study, the impact of capacitive coupling (CC) caused by the parasitic capacitance components of metal-oxide semiconductor field effect transistors (MOSFETs) on the data stored in a ...
Abstract: In this article modeling of back-biasing effects in Gallium Nitride (GaN) bidirectional high-electron-mobility transistors (HEMTs) is discussed. Specifically, static degradation of both ...
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