Abstract: We report experimental results on the dc and ac characterization of multiterminal SFIFSIS devices (where S, I, and F denote a superconductor (Nb), an insulator (AlO x), and a ferromagnetic ...
Abstract: Radiation-induced current gain and 1/f noise degradations in NPN bipolar junction transistors are due to accumulation of oxide-trapped charges and interface states at the surface of the ...
School of Physical Sciences, Indian Association for the Cultivation of Science (IACS), 2A & B Raja S. C. Mullick Road, Jadavpur, Kolkata 700032, India ...
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