Abstract: A 48 WL stacked 256-Gb V-NAND flash memory with a 3 b MLC technology is presented. Several vertical scale-down effects such as deteriorated WL loading and variations are discussed. To ...
Abstract: In this research, a compact model is proposed for trap-assisted tunneling (TAT) currents in 3-D NAND flash memory during erase/write (EW) cycling. Using the trap spectroscopy by charge ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results