Abstract: This work investigates the impacts of gate-stack variations on double-gate (DG) FeFET NVMs with the aid of TCAD atomistic simulations. The gate-stack variations considered include the ...
Abstract: We report ferroelectric (FE) laminate HSO/HZO MFMIS FeFETs. An MFM/MIS area ratio control enables low voltage operation and 10 5 endurance. FE lamination (2 × 10 nm, 4 × 5 nm) and low FE ...
A production-ready Android application demonstrating modern development practices and architectural patterns. This project showcases how to build scalable, maintainable, and testable Android ...
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