Abstract: This work presents a novel charge-based artificial neural network (ANN) augmented compact model that bridges physics-based and data-driven modeling for advanced semiconductor devices. Unlike ...
A Complete Switching Analytical Model of Low-Voltage eGaN HEMTs and Its Application in Loss Analysis
Abstract: Low-voltage enhancement-mode gallium nitride high electron mobility transistors (eGaN HEMTs) are a kind of promising devices to realize high-efficiency and high-power-density conversion ...
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