Abstract: The simulation of statistic characters plays an important role in the design of 4H-SiC chips. In this paper, a high-voltage silicon carbide chip simulation model with the termination ...
Abstract: In this paper, we examine the impact of random-dopant-fluctuation (RDF), process-variation-effect (PVE), and workfunction-fluctuation (WKF), on 16-nm-gate metal-oxide-semiconductor ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results